The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Dec. 09, 2016
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Tsong-Lin Shen, Kaohsiung, TW;
Chien-Chung Su, Kaohsiung, TW;
Chih-Cheng Wang, New Taipei, TW;
Yu-Chih Chuang, Tainan, TW;
Sheng-Wei Hung, Taipei, TW;
Min-Hung Wang, Taichung, TW;
Chin-Tsai Chang, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 7/02 (2006.01); H04R 19/04 (2006.01); H04R 19/00 (2006.01); H04R 7/16 (2006.01); H04R 31/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00246 (2013.01); B81B 7/02 (2013.01); H04R 7/16 (2013.01); H04R 19/005 (2013.01); H04R 19/04 (2013.01); H04R 31/00 (2013.01); B81B 2201/0257 (2013.01); B81B 2201/0264 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0315 (2013.01); B81B 2207/015 (2013.01); B81B 2207/056 (2013.01); B81B 2207/098 (2013.01); B81C 2201/0107 (2013.01); B81C 2201/0133 (2013.01); B81C 2203/0714 (2013.01); B81C 2203/0735 (2013.01); B81C 2203/0771 (2013.01); H04R 2201/003 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate comprising a MOS transistor. A MEMS device is integrally constructed above the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.