The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2019

Filed:

Mar. 11, 2015
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Rajendra C. Dias, Phoenix, AZ (US);

Tatyana N. Andryushchenko, Beaverton, OR (US);

Mauro J. Kobrinsky, Portland, OR (US);

Aleksandar Aleksov, Chandler, AZ (US);

David W. Staines, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 23/16 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/4853 (2013.01); H01L 21/565 (2013.01); H01L 23/16 (2013.01); H01L 23/3114 (2013.01); H01L 23/4985 (2013.01); H01L 23/49838 (2013.01); H01L 24/16 (2013.01); H01L 24/48 (2013.01); H01L 23/3121 (2013.01); H01L 24/49 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/16 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/49175 (2013.01); H01L 2924/069 (2013.01); H01L 2924/0715 (2013.01); H01L 2924/181 (2013.01); H01L 2924/186 (2013.01); H01L 2924/18165 (2013.01); H01L 2924/35121 (2013.01);
Abstract

Embodiments of the invention include a microelectronic device and methods for forming a microelectronic device. In an embodiment, the microelectronic device includes a semiconductor die that has one or more die contacts that are each electrically coupled to a contact pad by a conductive trace. The semiconductor die may have a first elastic modulus. The microelectronic device may also include an encapsulation layer over the semiconductor die and the conductive trace. The encapsulation layer may have a second elastic modulus that is less than the first elastic modulus. The microelectronic device may also include a first strain redistribution layer within the encapsulation layer. The first strain redistribution layer may have a footprint that covers the semiconductor die and a portion of the conductive traces. The strain redistribution layer may have a third elastic modulus that is less than the first elastic modulus and greater than the second elastic modulus.


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