The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Jun. 09, 2017
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Yen-Cheng Liu, New Taipei, TW;
Cheng-Yu Hsieh, Hsinchu, TW;
Shang-Ying Tsai, Taoyuan County, TW;
Kuei-Sung Chang, Kaohsiung, TW;
TAIWAN SEMICONDUCTOR MANFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductive structure includes a first substrate comprising an interconnection layer and a first conductor protruding from the interconnection layer, a second substrate comprising a second conductor bonded with the first conductor, a first cavity between and sealed by the first substrate and the second substrate and the first cavity has a first cavity pressure, a second cavity between and sealed by the first substrate and the second substrate and the second cavity has a second cavity pressure, a first surface of the interconnection layer is a sidewall of the first cavity, wherein the first cavity pressure is less than the second cavity pressure.