The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Mar. 26, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
En-Chiuan Liou, Tainan, TW;
Yu-Cheng Tung, Kaohsiung, TW;
Chih-Wei Yang, Tainan, TW;
Sho-Shen Lee, New Taipei, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Abstract
The present invention provides a dynamic random access memory structure, comprising a substrate defining a cell region and a peripheral region on the substrate, a shallow trench isolation structure located in the peripheral region adjacent to the cell region, wherein the shallow trench isolation structure has a concave top surface, a first dummy bit line gate located within the shallow trench isolation structure of the peripheral area, and a second dummy bit line gate located in the cell region and adjacent to the first dummy bit line gate, wherein a top surface of the first dummy bit line gate is lower than a top surface of the second dummy bit line gate.