The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2019

Filed:

Jun. 16, 2017
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Merri Lyn Carlson, Boise, ID (US);

Hongbin Zhu, Boise, ID (US);

Gordon A. Haller, Boise, ID (US);

James E. Davis, Meridian, ID (US);

Kevin G. Duesman, Boise, ID (US);

James Mathew, Boise, ID (US);

Michael P. Violette, Boise, ID (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); H01L 25/10 (2006.01); H01L 27/11529 (2017.01); H01L 27/11548 (2017.01);
U.S. Cl.
CPC ...
H01L 25/105 (2013.01); H01L 27/11529 (2013.01); H01L 27/11548 (2013.01); H01L 27/11556 (2013.01);
Abstract

In one embodiment, an apparatus comprises a tier comprising alternating first and second layers, wherein the first layers comprise a first conductive material and the second layers comprise a first dielectric material; a lower metal layer below the tier; a bond pad above the tier, the bond pad coupled to the lower metal layer by a via extending through the tier; and a first channel formed through a portion of the tier, the first channel surrounding the via, the first channel comprising a second dielectric material.


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