The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2019

Filed:

Sep. 25, 2017
Applicant:

Hitachi High-technologies Corporation, Tokyo, JP;

Inventors:

Soichiro Eto, Tokyo, JP;

Takeshi Ohmori, Tokyo, JP;

Tatehito Usui, Tokyo, JP;

Satomi Inoue, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01J 37/244 (2006.01); H01L 21/67 (2006.01); H01L 21/66 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/244 (2013.01); H01J 37/32009 (2013.01); H01L 21/02002 (2013.01); H01L 21/67259 (2013.01); H01L 22/26 (2013.01); H01J 37/32963 (2013.01); H01L 21/02104 (2013.01);
Abstract

A plasma processing apparatus processes a film layer to be processed disposed in advance on a surface of a wafer by using a plasma being switched on and off in a processing chamber in predetermined cycles and periods and includes a detection control unit for detecting a processing amount of the film layer on the surface of the wafer. The detection control unit includes a light source unit, a detection unit, and a film thickness/depth calculation unit. This detection control unit detects a plurality of times an amount indicating the intensity of light on a sample surface at predetermined cycles during a period in which the plasma is switched off while the wafer is being processed and detects a processing amount of the film layer on the sample surface by using the detected amount indicating the light intensity.


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