The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Apr. 27, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Wei-Han Fan, Hsin-Chu, TW;
Wei-Yuan Lu, Taipei, TW;
Yu-Lin Yang, Hsinchu County, TW;
Chun-Hsiang Fan, Hsinchu, TW;
Sai-Hooi Yeong, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes providing a structure having a substrate and a fin extending from the substrate, wherein the fin includes a first semiconductor material and has a source region, a channel region, and a drain region for a transistor; forming a gate stack over the channel region; performing a surface treatment to the fin in the source and drain regions, thereby converting an outer portion of the fin in the source and drain regions into a different material other than the first semiconductor material; etching the converted outer portion of the fin in the source and drain regions, thereby reducing a width of the fin in the source and drain regions; and depositing an epitaxial layer over the fin in the source and drain regions.