The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Nov. 19, 2009
Rikimaru Sakamoto, Toyama, JP;
Bangching Ho, Toyama, JP;
Takafumi Endo, Toyama, JP;
NISSAN CHEMICAL INDUSTRIES, LTD., Tokyo, JP;
Abstract
Underlayer films of high-energy radiation resists applied onto semiconductor substrates in a lithography process for producing semiconductor devices and that are used to prevent reflection, static electrification, and development defects and to suppress outgassing during the exposure of resist layers with high-energy radiation are prepared from compositions including a film component having an aromatic ring structure or a hetero ring structure. The film component having an aromatic ring structure or a hetero ring structure is contained at a proportion of 5 to 85% by mass. The film component may be a compound having an aromatic ring structure or a hetero ring structure, and the compound may be a polymer or a polymer precursor including a specific repeating unit. The aromatic ring may be a benzene ring or fused benzene ring, and the hetero ring structure may be triazinetrione ring.