The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2019

Filed:

Dec. 28, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Sungsam Lee, Yongin-si, KR;

Junsoo Kim, Anyang-si, KR;

Hyoshin Ahn, Seoul, KR;

Satoru Yamada, Yongin-si, KR;

Joohyun Jeon, Suwon-si, KR;

MoonYoung Jeong, Suwon-si, KR;

Chunhyung Chung, Seoul, KR;

Min Hee Cho, Suwon-si, KR;

Kyo-Suk Chae, Suwon-si, KR;

Eunae Choi, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/045 (2013.01); H01L 29/4236 (2013.01);
Abstract

A semiconductor device including a semiconductor substrate including a trench, the semiconductor substrate having a crystal structure; and an insulating layer covering an inner sidewall of the trench, wherein the inner sidewall of the trench has at least one plane included in a {320} family of planes of the crystal structure or at least one plane similar to the {320} family of planes.


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