The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Apr. 12, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Po-Kuang Hsieh, Kaohsiung, TW;
Kuan-Hao Tseng, Kaohsiung, TW;
Yu-Hsiang Lin, New Taipei, TW;
Shih-Hung Tsai, Tainan, TW;
Yu-Ting Tseng, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A manufacturing method of an epitaxial fin-shaped structure includes the following steps. A substrate is provided. A recess is formed in the substrate. An epitaxial layer is formed on the substrate. The epitaxial layer is partly formed in the recess and partly formed outside the recess. The epitaxial layer has a dent formed on the top surface of the epitaxial layer, and the dent is formed corresponding to the recess in a thickness direction of the substrate. A nitride layer is conformally formed on the epitaxial layer. An oxide layer is formed on the nitride layer. A first planarization process is performed to remove a part of the oxide layer, and the first planarization process is stopped on the nitride layer. The epitaxial layer in the recess is patterned for forming at least one epitaxial fin-shaped structure.