The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2019

Filed:

Aug. 30, 2017
Applicant:

Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;

Inventors:

Chih Cheng Lee, Kaohsiung, TW;

Yuan-Chang Su, Kaohsiung, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H05K 1/03 (2006.01); H05K 1/11 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 21/683 (2006.01); H01L 21/48 (2006.01); H05K 1/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/486 (2013.01); H01L 21/4857 (2013.01); H01L 21/6835 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 23/49894 (2013.01); H05K 1/0284 (2013.01); H05K 1/0366 (2013.01); H05K 1/113 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H05K 1/036 (2013.01); H05K 1/0313 (2013.01); H05K 1/111 (2013.01); H05K 1/119 (2013.01);
Abstract

A substrate for packaging a semiconductor device is disclosed. The substrate includes a first dielectric layer having a first surface and a second surface opposite to the first surface, a first patterned conductive layer adjacent to the first surface of the first dielectric layer, and a second patterned conductive layer adjacent to the second surface of the first dielectric layer. The first dielectric layer includes a first portion adjacent to the first surface, a second portion adjacent to the second surface, and a reinforcement structure between the first portion and the second portion. A thickness of the first portion of the first dielectric layer is different from a thickness of the second portion of the first dielectric layer.


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