The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Jun. 05, 2017
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Dae-Sub Jung, Shanghai, CN;
Lei Fang, Shanghai, CN;
Guang Li Yang, Shanghai, CN;
De Yan Chen, Shanghai, CN;
Abstract
The present disclosure provides a method for forming a semiconductor device, including: forming a mask layer over a substrate, the mask layer containing an opening, exposing a surface portion of the substrate to form an exposed surface portion of the substrate; forming an insulation structure between the mask layer and the substrate, and in the opening; performing a thinning process on the insulation structure exposed by the opening to form a recess region on a top of the insulation structure; and forming a gate electrode over the insulation structure and covering a portion of the recess region.