The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2019

Filed:

Dec. 11, 2018
Applicant:

Mattson Technology, Inc., Fremont, CA (US);

Inventors:

Michael X. Yang, Palo Alto, CA (US);

Hua Chung, Saratoga, CA (US);

Xinliang Lu, Fremont, CA (US);

Haochen Li, Fremont, CA (US);

Ting Xie, Fremont, CA (US);

Qi Zhang, San Jose, CA (US);

Assignee:

Mattson Technology, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/3213 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02063 (2013.01); H01J 37/3244 (2013.01); H01J 37/32357 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/28525 (2013.01); H01L 21/32136 (2013.01); H01L 21/67028 (2013.01); H01L 21/67069 (2013.01);
Abstract

Processes for surface treatment of a workpiece are provided. In one example implementation, organic radicals (e.g., methyl CHradicals) can be generated by exciting and/or dissociating hydrogen and/or inert gas (e.g., Ar, He, etc) molecules in a remote plasma source and a subsequent reaction with organic molecule (alkanes and alkenes). The organic radicals (e.g., methyl CHradicals) can be exposed to the silicon and/or silicon germanium surfaces. After exposure to the organic radicals, the silicon and/or silicon germanium surfaces can be stable in air for a time period (e.g., days) with reduced surface oxidation such that the silicon and/or silicon germanium surfaces can be effectively protected from oxidation. As such, native surface oxide removal process before subsequent process steps can be eliminated.


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