The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Mar. 19, 2018
Intel Corporation, Santa Clara, CA (US);
Nicole K. Thomas, Portland, OR (US);
James S. Clarke, Portland, OR (US);
Jessica M. Torres, Portland, OR (US);
Lester Lampert, Portland, OR (US);
Ravi Pillarisetty, Portland, OR (US);
Hubert C. George, Portland, OR (US);
Kanwaljit Singh, Rotterdam, NL;
Jeanette M. Roberts, North Plains, OR (US);
Roman Caudillo, Portland, OR (US);
Zachary R. Yoscovits, Beaverton, OR (US);
David J. Michalak, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments of the present disclosure describe use of isotopically purified materials in donor- or acceptor-based spin qubit devices and assemblies. An exemplary spin qubit device assembly may include a semiconductor host layer that includes an isotopically purified material, a dopant atom in the semiconductor host layer, and a gate proximate to the dopant atom. An isotopically purified material may include a lower atomic-percent of isotopes with nonzero nuclear spin than the natural abundance of those isotopies in the non-isotopically purified material. Reducing the presence of isotopes with nonzero nuclear spin in a semiconductor host layer may improve qubit coherence and thus performance of spin qubit devices and assemblies.