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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10388644 B1

PDFFull Text
Date of Patent:
Aug. 20, 2019

Filed:

Aug. 14, 2017

Method of manufacturing conductors and semiconductor device which includes conductors

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Kam-Tou Sio, Zhubei, TW;

Chih-Liang Chen, Hsinchu, TW;

Chih-Ming Lai, Hsinchu, TW;

Charles Chew-Yuen Young, Cupertino, CA (US);

Hui-Ting Yang, Zhubei, TW;

Ko-Bin Kao, Taichung, TW;

Ru-Gun Liu, Zhubei, TW;

Shun Li Chen, Tainan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

Bitew A Dinke

Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 27/02 (2006.01); H01L 21/3213 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 27/11 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 21/32133 (2013.01); H01L 21/32139 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 27/0886 (2013.01); H01L 29/41791 (2013.01); H01L 29/42376 (2013.01); H01L 21/823437 (2013.01); H01L 27/1104 (2013.01); H01L 27/1116 (2013.01);
Abstract

A method of manufacturing conductors for a semiconductor device, the method comprising: forming a structure on a base; and eliminating selected portions of members of a first set and selected portions of members of a second set from the structure. The structure includes: capped first conductors arranged parallel to a first direction; and capped second conductors arranged parallel to and interspersed with the capped first conductors. The capped first conductors are organized into at least first and second sets. Each member of the first set has a first cap with a first etch sensitivity. Each member of the second set has a second cap with a second etch sensitivity. Each of the capped second conductors has a third etch sensitivity. The first, second and third etch sensitivities are different.

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