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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10388524 B1

PDFFull Text
Date of Patent:
Aug. 20, 2019

Filed:

Dec. 06, 2017

Film forming method, boron film, and film forming apparatus

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Hirokazu Ueda, Nirasaki, JP;

Masahiro Oka, Nirasaki, JP;

Hiraku Ishikawa, Nirasaki, JP;

Yoshimasa Watanabe, Nirasaki, JP;

Syuhei Yonezawa, Nirasaki, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorneys:

Nath, Goldberg & Meyer

Jerald L. Meyer

Primary Examiner:

Caridad Everhart

Assistant Examiner:

Ankush K Singal

Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01J 37/32 (2006.01); C23C 16/511 (2006.01); C23C 16/38 (2006.01); C23C 16/46 (2006.01); C23C 16/44 (2006.01); H01L 21/02 (2006.01); C23C 16/509 (2006.01); H01L 27/11551 (2017.01); H01L 27/11578 (2017.01);
U.S. Cl.
CPC ...
H01L 21/0332 (2013.01); C23C 16/38 (2013.01); C23C 16/4412 (2013.01); C23C 16/46 (2013.01); C23C 16/5096 (2013.01); C23C 16/511 (2013.01); H01J 37/32201 (2013.01); H01J 37/32229 (2013.01); H01J 37/32449 (2013.01); H01L 21/02112 (2013.01); H01L 21/02274 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01J 2237/182 (2013.01); H01J 2237/3321 (2013.01); H01L 27/11551 (2013.01); H01L 27/11578 (2013.01);
Abstract

There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr).

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