The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Sep. 18, 2015
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Shiyu Sun, San Jose, CA (US);
Naomi Yoshida, Sunnyvale, CA (US);
Benjamin Colombeau, Salem, MA (US);
Hans-Joachim L. Gossmann, Summit, NJ (US);
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC., Gloucester, MA (US);
Abstract
A method of forming an asymmetrical three dimensional semiconductor device. The method may include providing a fin structure extending perpendicularly from a substrate plane and having a fin axis parallel to the substrate plane, wherein a portion of the fin structure is covered by a gate structure defining a channel region, and wherein the fin structure comprises a first end surface not covered by the gate structure and second end surface not covered by the gate structure. The method may further include directing ions in a fin treatment to the fin structure, wherein the fin treatment comprises a first treatment of the first end surface and a second treatment of the second end surface different from the first treatment.