The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Jun. 21, 2018
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Yi Jiang, Singapore, SG;
Bharat Bhushan, Singapore, SG;
Curtis Chun-I Hsieh, Singapore, SG;
Mahesh Bhatkar, Singapore, SG;
Wanbing Yi, Singapore, SG;
Juan Boon Tan, Singapore, SG;
Assignee:
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
H01L 27/222 (2013.01); H01L 43/12 (2013.01); H01L 23/585 (2013.01); H01L 43/02 (2013.01);
Abstract
A method for forming a MRAM device free of seal ring peeling defect, and the resulting device, are provided. Embodiments include forming magnetic tunnel junction (MTJ) over a metallization layer in a seal ring region of an MRAM device; forming a metal filled via connecting the MTJ and the metallization layer; forming a tunnel junction via over the MTJ; and forming a top electrode over the tunnel junction via.