The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
May. 11, 2018
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Simon Ruffell, South Hamilton, MA (US);
Huixiong Dai, San Jose, CA (US);
Jun Lang, Union City, CA (US);
John Hautala, Beverly, MA (US);
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC., Gloucester, MA (US);
Abstract
A method may include providing a surface feature on a substrate, the surface feature comprising a feature shape a feature location, and a dimension along a first direction within a substrate plane; depositing a layer comprising a layer material on the surface feature; and directing ions in an ion exposure at an angle of incidence toward the substrate, the angle of incidence forming a non-zero angle with respect to a perpendicular to the substrate plane, wherein the ion exposure comprises the ions and reactive neutral species, the ion exposure reactively etching the layer material, wherein the ions impact a first portion of the surface feature and do not impact a second portion of the surface feature, and wherein an altered surface feature is generated, the altered surface feature differing from the surface feature in at least one of: the dimension along the first direction, the feature shape, or the feature location.