The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2019

Filed:

May. 31, 2017
Applicant:

Tokyo Electron Limited, Minato-ku, Tokyo, JP;

Inventors:

Kai-Hung Yu, Watervliet, NY (US);

Kandabara N. Tapily, Mechanicville, NY (US);

Takahiro Hakamata, Albany, NY (US);

Subhadeep Kal, Albany, NY (US);

Gerrit J. Leusink, Rexford, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/31 (2006.01); H01L 21/60 (2006.01); H01L 21/205 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 21/3105 (2006.01); C23C 16/40 (2006.01); B01D 53/76 (2006.01); C23C 16/455 (2006.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
C23C 16/40 (2013.01); B01D 53/76 (2013.01); C23C 16/04 (2013.01); C23C 16/401 (2013.01); C23C 16/455 (2013.01); C23C 16/45563 (2013.01); H01L 21/02057 (2013.01); H01L 21/205 (2013.01); H01L 21/28562 (2013.01); H01L 21/31 (2013.01); H01L 21/3105 (2013.01); H01L 21/31053 (2013.01); H01L 21/76826 (2013.01); H01L 21/76849 (2013.01); B01D 2251/202 (2013.01); H01L 2021/60052 (2013.01);
Abstract

Embodiments of the invention provide methods for selective deposition on different materials using a surface treatment. According to one embodiment, the method includes providing a substrate containing a first material layer having a first surface and a second material layer having a second surface, and performing a chemical oxide removal process that terminates that second surface with hydroxyl groups. The method further includes modifying the second surface by exposure to a process gas containing a hydrophobic functional group, the modifying substituting the hydroxyl groups on the second surface with the hydrophobic functional group, and selectively depositing a metal-containing layer on the first surface but not on the modified second surface by exposing the substrate to a deposition gas.


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