The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
May. 26, 2017
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Alok Ranjan, Tomiya, JP;
Sonam D. Sherpa, Albany, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
According to one embodiment, a substrate processing method includes providing a substrate containing Si raised features, depositing a conformal film on the Si raised features, and performing a spacer etch process that removes horizontal portions of the conformal film while substantially leaving vertical portions of the conformal film to form sidewall spacers on the Si raised features, the performing including a) exposing the substrate to a plasma-excited first process gas consisting of Hgas and optionally an inert gas, and b) exposing the substrate to a plasma-excited second process gas containing i) NF, O, H, and Ar, ii) NF, O, and H, iii) NFand O, iv) NF, O, and Ar, v) NFand H, or vi) NF, H, and Ar. The method further includes removing the Si raised features while maintaining the sidewall spacers on the substrate. The removing may be performed using steps a) and b).