The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Oct. 06, 2017
Applied Materials, Inc., Santa Clara, CA (US);
Andrew C. Kummel, San Diego, CA (US);
Mary Edmonds, San Diego, CA (US);
Mei Chang, Saratoga, CA (US);
Jessica S. Kachian, Sunnyvale, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods for depositing silicon include cycling dosing between 1 and 100 cycles of one or more first chlorosilane precursors on a III-V surface at a temperature between 300° C. and 500° C. to form a first layer. Methods may include desorbing chlorine from the first layer by treating the first layer with atomic hydrogen to form a second layer. Methods may include forming a silicon multilayer on the second layer by cycling dosing between 1 and 100 cycles of one or more second chlorosilane precursors and atomic hydrogen at a temperature between 300° C. and 500° C. A layered composition includes a first layer selected from the group consisting of InGaAs, InGaSb, InGaN, SiGe, and Ge, wherein X is between 0.1 and 0.99, and a second layer, wherein the second layer comprises Si—H and Si—OH.