The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 2019

Filed:

Oct. 06, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wan-Ting Shih, Hsinchu, TW;

Nai-Wei Liu, Fengshan, TW;

Jing-Cheng Lin, Hsinchu, TW;

Cheng-Lin Huang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 24/04 (2013.01); H01L 23/3114 (2013.01); H01L 23/3128 (2013.01); H01L 23/49822 (2013.01); H01L 23/5389 (2013.01); H01L 24/03 (2013.01); H01L 24/14 (2013.01); H01L 24/19 (2013.01); H01L 24/82 (2013.01); H01L 24/97 (2013.01); H01L 21/568 (2013.01); H01L 23/49816 (2013.01); H01L 24/13 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02317 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/24137 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/97 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/181 (2013.01);
Abstract

An embodiment is a structure including a molding compound laterally encapsulating a chip with a contact pad. A first dielectric layer is formed overlying the molding compound. A first metallization layer is formed overlying the first dielectric layer, in which the first metallization layer extends through the first dielectric layer to contact the contact pad. A second dielectric layer is formed overlying the first metallization layer and the first dielectric layer. A second metallization layer is formed overlying the second dielectric layer and extends through the second dielectric layer to contact the first metallization layer.


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