The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Jul. 26, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Yu-Tseng Hsien, Tongxiao Township, TW;
Chin-Shen Lin, Taipei, TW;
Ching-Shun Yang, Zhudong Township, TW;
Jui-Feng Kuan, Zhubei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure, in some embodiments, relates to a method of performing electromigration sign-off. The method includes determining an environmental temperature having a same value corresponding to a plurality of interconnect wires within a plurality of electrical networks of an integrated chip design. A plurality of actual temperatures having different values corresponding to different ones of the plurality of interconnect wires are determined. The plurality of actual temperatures are respectively determined by adding the environmental temperature to a real temperature that accounts for Joule heating one of the plurality of interconnect wires. An electromigration margin for a first interconnect wire within a first electrical network of the plurality of electrical networks is determined. The electromigration margin is determined at a first one of the plurality of actual temperatures corresponding to the first interconnect wire. The electromigration margin is compared to an electromigration metric.