The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
May. 01, 2017
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Volume Chien, Sinying, TW;
Yun-Wei Cheng, Taipei, TW;
I-I Cheng, Tainan, TW;
Shiu-Ko JangJian, Tainan, TW;
Chi-Cherng Jeng, Madou Township, TW;
Chih-Mu Huang, Tainan, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Abstract
Among other things, one or more support structures for integrated circuitry and techniques for forming such support structures are provided. A support structure comprises one or more trench structures, such as a first trench structure and a second trench structure formed around a periphery of integrated circuitry. In some embodiments, one or more trench structures are formed according to partial substrate etching, such that respective trench structures are formed into a region of a substrate. In some embodiments, one or more trench structures are formed according to discontinued substrate etching, such that respective trench structures comprise one or more trench portions separated by separation regions of the substrate. The support structure mitigates stress energy from reaching the integrated circuitry, and facilitates process-induced charge release from the integrated circuitry.