The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2019

Filed:

May. 06, 2014
Applicant:

Kla-tencor Corporation, Milpitas, CA (US);

Inventors:

Roie Volkovich, Hadera, IL;

Hiroyuki Kurita, Saitama, JP;

Yoel Feler, Haifa, IL;

Assignee:

KLA-Tencor Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 22/10 (2013.01);
Abstract

The selection of metrology targets for use in a focus and dose application includes providing a FEM wafer including a plurality of fields with one or more metrology targets, measuring the one or more metrology targets within each field of the FEM wafer, performing a regression process on measurement results from the one or more selected fields of the FEM wafer to determine one or more DOI values for the one or more metrology targets of the one or more selected fields, calculating one or more diagnostic parameters for the one or more metrology targets of the one or more selected fields based on the regression process performed on the one or more selected fields of the FEM wafer, and identifying a set of candidate metrology targets based on the one or more calculated diagnostic parameters of the one or more selected fields of the FEM wafer.


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