The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
Dec. 16, 2014
Applicants:
Entegris, Inc., Billerica, MA (US);
Atmi Taiwan Co., Ltd., Hsin-chu, TW;
Inventors:
Steven Bilodeau, Oxford, CT (US);
Jeffrey A. Barnes, Danielsville, PA (US);
Emanuel Cooper, Scarsdale, NY (US);
Hsing-Chen Wu, Hsin-chu, TW;
Sheng-Hung Tu, Hsin-chu, TW;
Thomas Parson, Waterbury, CT (US);
Min-chieh Yang, Hsin-chu, TW;
Assignee:
Entegris, Inc., Billerica, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); C09K 13/00 (2006.01); H01L 21/3205 (2006.01); H01L 29/16 (2006.01); H01L 29/26 (2006.01); H01L 29/45 (2006.01); C09G 1/04 (2006.01); H01L 21/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32134 (2013.01); C09K 13/00 (2013.01); H01L 21/32051 (2013.01); H01L 29/16 (2013.01); H01L 29/26 (2013.01); H01L 29/45 (2013.01); C09G 1/04 (2013.01); H01L 21/24 (2013.01); H01L 21/246 (2013.01);
Abstract
Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.