The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Nov. 02, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Liang Yi, Singapore, SG;
Che-Jung Hsu, Taoyuan, TW;
Yu-Cheng Tung, Kaohsiung, TW;
Jianjun Yang, Singapore, SG;
Yuan-Hsiang Chang, Hsinchu, TW;
Chih-Chien Chang, Hsinchu, TW;
Weichang Liu, Singapore, SG;
Shen-De Wang, Hsinchu County, TW;
Kok Wun Tan, Singapore, SG;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of manufacturing FinFET semiconductor devices in memory regions and logic regions includes the steps of forming a first gate material layer on a substrate and fins, patterning the first gate material layer to form a control gate, forming a second gate material layer on the substrate and fins, performing an etch process to the cell region so that the second gate material layer in the cell region is lower than the second gate material layer in the peripheral region, patterning the second gate material layer to form a select gate in the cell region and a dummy gate in the logic region respectively.