The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2019

Filed:

May. 17, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Lei Sun, Albany, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Wenhui Wang, San Jose, CA (US);

Yulu Chen, Troy, NY (US);

Erik Verduijn, Rensselaer, NY (US);

Zhengqing John Qi, Albany, NY (US);

Guoxiang Ning, Ballston Lake, NY (US);

Daniel J. Dechene, Watervliet, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/768 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/0276 (2013.01); H01L 21/3065 (2013.01); H01L 21/76879 (2013.01);
Abstract

Methods of forming printed patterns and structures formed using printed patterns. A first line and a second line are lithographically printed in a first layer composed of photoimageable material with a space arranged between the first line and the second line. A dummy assist feature is also lithographically printed in the photoimageable material of the first layer. A second layer underlying the first layer is etched with the first line, the second line, and the dummy assist feature present as an etch mask. The dummy assist feature is arranged on a portion of the space adjacent to the first line and supports the photoimageable material of the first line during etching.


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