The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Sep. 28, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yung-Chih Wang, Taoyuan, TW;
Yu-Chieh Liao, Taoyuan, TW;
Tai-I Yang, Hsinchu, TW;
Hsin-Ping Chen, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42376 (2013.01); H01L 29/0676 (2013.01); H01L 29/42392 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract
A device includes a nanowire, a gate dielectric layer and a gate electrode. The nanowire has a sidewall. The gate dielectric layer surrounds the nanowire. The gate electrode surrounds the gate dielectric layer and separated from the nanowire. The gate electrode comprises a sloped sidewall inclined with respect to the sidewall of the nanowire.