The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2019

Filed:

Sep. 11, 2018
Applicants:

International Business Machines Corporation, Armonk, NY (US);

Globalfoundries, Inc., Grand Cayman, KY;

Inventors:

Andrew M. Greene, Albany, NY (US);

Injo Ok, Loudonville, NY (US);

Balasubramanian Pranatharthiharan, Watervliet, NY (US);

Charan V. V. S. Surisetty, Clifton Park, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Assignees:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 23/528 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01); H01L 21/306 (2006.01); H01L 21/3205 (2006.01); H01L 21/283 (2006.01); H01L 21/3213 (2006.01); H01L 21/8234 (2006.01); H01L 29/417 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/283 (2013.01); H01L 21/30604 (2013.01); H01L 21/3205 (2013.01); H01L 21/32133 (2013.01); H01L 21/76829 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 21/76895 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/41791 (2013.01); H01L 29/4916 (2013.01); H01L 29/6681 (2013.01); H01L 29/66545 (2013.01); H01L 29/785 (2013.01);
Abstract

A self-aligned interconnect structure includes a fin structure patterned in a substrate; an epitaxial contact disposed over the fin structure; a first metal gate and a second metal gate disposed over and substantially perpendicular to the epitaxial contact, the first metal gate and the second metal gate being substantially parallel to one another; and a metal contact on and in contact with the substrate in a region between the first and second metal gates.


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