The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
Mar. 09, 2018
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, Tokyo, JP;
Saya Shimomura, Komatsu Ishikawa, JP;
Toshifumi Nishiguchi, Hakusan Ishikawa, JP;
Hiroaki Katou, Nonoichi Ishikawa, JP;
Kenya Kobayashi, Nonoichi Ishikawa, JP;
Takahiro Kawano, Nonoichi Ishikawa, JP;
Tetsuya Ohno, Nomi Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device comprising a drain layer, a base region, a source region, a field plate electrode, and a gate region. The drift layer is formed on the drain layer. The base region is formed on the drift layer. The source region is formed on the base region. The field plate electrode is formed inside a trench reaching the drift layer through the base region from the source region. The gate region is formed inside the trench, wherein the gate region has a U-shape including a recess on the gate region in a direction along the trench and is formed such that, on upper surfaces of respective both ends of the U-shape, a position of an inner end on a side of the recess is higher than a position of an outer end on a side of the second insulating film.