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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10319644 B1

PDFFull Text
Date of Patent:
Jun. 11, 2019

Filed:

Mar. 16, 2017

Method for manufacturing semiconductor structure

Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Man-Ho Kwan, Kowloon, HK;

Fu-Wei Yao, Hsinchu, TW;

Ru-Yi Su, Yunlin County, TW;

Chun Lin Tsai, Hsin-Chu, TW;

Alexander Kalnitsky, San Francisco, CA (US);

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;

Attorneys:

WPAT, P.C., Intellectual Property Attorneys

Anthony King

Primary Examiner:

Jamie C Niesz

Int. Cl.
CPC ...
H01L 21/8252 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/761 (2006.01); H01L 21/768 (2006.01); H01L 21/8258 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/205 (2006.01); H01L 23/535 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); H01L 29/866 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8252 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/02549 (2013.01); H01L 21/26546 (2013.01); H01L 21/761 (2013.01); H01L 21/76898 (2013.01); H01L 21/8258 (2013.01); H01L 27/0605 (2013.01); H01L 27/0688 (2013.01); H01L 29/0646 (2013.01); H01L 29/16 (2013.01); H01L 29/205 (2013.01); H01L 23/535 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01); H01L 29/78 (2013.01); H01L 29/866 (2013.01);
Abstract

In some embodiments, a semiconductor structure includes a first device and a second device. The first device has a first surface. The first device includes a first active region defined by a first material system. The second device has a second surface. The second surface is coplanar with the first surface. The second device includes a second active region defined by a second material system. The second material system is different from the first material system.

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