The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2019

Filed:

Oct. 02, 2017
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Kohichi Satoh, Nirasaki, JP;

Shinya Okabe, Nirasaki, JP;

Nagayasu Hiramatsu, Nirasaki, JP;

Motoko Nakagomi, Nirasaki, JP;

Yuji Kobayashi, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/44 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01); C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/06 (2006.01); C23C 16/455 (2006.01); C23C 16/509 (2006.01); H01J 37/26 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/0281 (2013.01); C23C 16/045 (2013.01); C23C 16/06 (2013.01); C23C 16/45512 (2013.01); C23C 16/45536 (2013.01); C23C 16/45574 (2013.01); C23C 16/5096 (2013.01); H01J 37/32 (2013.01); H01L 21/02274 (2013.01); H01J 37/26 (2013.01); H01J 2237/3321 (2013.01);
Abstract

A film forming method of forming a film containing a metal element on a substrate using a source gas containing the metal element and a reactant gas that reacts with the source gas, which includes: forming a lower layer film containing the metal element on a surface of the substrate through a plasma CVD process by supplying the source gas into a process container and plasmarizing the source gas; and subsequently, laminating an upper layer film containing the metal element on the lower layer film by a plasma ALD process which alternately performs an adsorption step of supplying the source gas into the process container to adsorb the source gas onto the surface of the substrate with the lower layer film formed thereon, and a reaction step of supplying the reactant gas into the process container and plasmarizing the reactant gas.


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