The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
Aug. 10, 2016
Air Products and Chemicals, Inc., Allentown, PA (US);
Manchao Xiao, San Diego, CA (US);
Xinjian Lei, Vista, CA (US);
Ronald Martin Pearlstein, San Marcos, CA (US);
Haripin Chandra, San Marcos, CA (US);
Eugene Jospeh Karwacki, Jr., Orefield, PA (US);
Bing Han, San Marcos, CA (US);
Mark Leonard O'Neill, Queen Creek, AZ (US);
VERSUM MATERIALS US, LLC, Tempe, AZ (US);
Abstract
Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of RSi(NRR)Hwherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of RSi(OR)Hwherein x=1, 2, 3; an organoaminosilane having a formula of RN(SiR(NRR)H); an organoaminosilane having a formula of RN(SiRLH)and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NRR)H. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).