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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10312235 B1

PDFFull Text
Date of Patent:
Jun. 04, 2019

Filed:

Feb. 08, 2018

Method of forming fin shape structure having different buffer layers

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Wen-Yin Weng, Taichung, TW;

Cheng-Tung Huang, Kaohsiung, TW;

Wei-Heng Hsu, Kaohsiung, TW;

Yu-Ming Lin, Tainan, TW;

Ya-Ru Yang, New Taipei, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Duy T Nguyen

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 21/8258 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/165 (2006.01); H01L 29/205 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/762 (2013.01); H01L 21/76224 (2013.01); H01L 21/8258 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/0653 (2013.01); H01L 29/165 (2013.01); H01L 29/205 (2013.01); H01L 29/66795 (2013.01); H01L 29/7849 (2013.01); H01L 29/7851 (2013.01); H01L 21/02532 (2013.01); H01L 21/02535 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/02639 (2013.01);
Abstract

A fin shaped structure and a method of forming the same. The method includes providing a substrate having a first fin structure and a second fin structure. Next, an insulation material layer is formed on the substrate. Then, a portion of the first fin structure is removed, to form a first recess. Following this, a first buffer layer and a first channel layer are formed sequentially in the first recess. Next, a portion of the second fin structure is removed, to form a second recess. Then, a second buffer layer and a second channel layer are formed in the second recess sequentially, wherein the second buffer layer is different from the first buffer layer.

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