The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2019

Filed:

Oct. 09, 2017
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Zhaohui Ma, Boise, ID (US);

Wei Zhou, Singapore, SG;

Chee Chung So, Singapore, SG;

Soo Loo Ang, Singapore, SG;

Aibin Yu, Singapore, SG;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/18 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/544 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 21/561 (2013.01); H01L 21/563 (2013.01); H01L 21/6835 (2013.01); H01L 21/78 (2013.01); H01L 23/3107 (2013.01); H01L 23/3128 (2013.01); H01L 23/544 (2013.01); H01L 24/94 (2013.01); H01L 24/96 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 24/81 (2013.01); H01L 24/97 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68381 (2013.01); H01L 2223/54433 (2013.01); H01L 2223/54486 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/131 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/94 (2013.01); H01L 2224/97 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/18161 (2013.01);
Abstract

Methods of protecting semiconductor devices may involve cutting partially through a thickness of a semiconductor wafer to form trenches between stacks of semiconductor dice on regions of integrated circuitry of the semiconductor wafer. A protective material may be dispensed into the trenches and to a level at least substantially the same as a height of the stacks of semiconductor dice. Material of the semiconductor wafer may be removed from a back side thereof at least to a depth sufficient to expose the protective material in the trenches. A remaining thickness of the protective material between the stacks of semiconductor dice may be cut through.


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