The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Aug. 07, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yi-Cheng Li, Yunlin County, TW;
Chien-Hao Chen, Chuangwei Township, Yilan County, TW;
Yung-Cheng Lu, Hsinchu, TW;
Jr-Jung Lin, Hsinchu, TW;
Chun-Hung Lee, Hsinchu, TW;
Chao-Cheng Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a first amorphous layer over a substrate. The substrate has a base portion and a first fin portion over the base portion, and the first amorphous layer covers the first fin portion. The method includes annealing the first amorphous layer to crystallize the first amorphous layer into a first polycrystalline layer. The method includes forming a second amorphous layer over the first polycrystalline layer. The method includes removing a first portion of the second amorphous layer and a second portion of the first polycrystalline layer under the first portion. The remaining second amorphous layer and the remaining first polycrystalline layer together form a first gate structure over and across the first fin portion.