The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2019

Filed:

Jan. 10, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Harry-Hak-Lay Chuang, Paya Lebar Crescent, SG;

Kuei-Hung Shen, Hsinchu, TW;

Hsun-Chung Kuang, Hsinchu, TW;

Cheng-Yuan Tsai, Hsin-Chu County, TW;

Ru-Liang Lee, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);
Abstract

The present disclosure provides a semiconductor structure. The semiconductor structure includes a bottom electrode via (BEVA), a recap layer on the BEVA, and a magnetic tunneling junction (MTJ) layer over the recap layer. The BEVA includes a lining layer over a bottom and a sidewall of a trench of the BEVA, and electroplated copper over the lining layer, filling the trench of the BEVA. The recap layer overlaps a top surface of the lining layer and a top surface of the electroplated copper.


Find Patent Forward Citations

Loading…