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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10304829 B1

PDFFull Text
Expired
Date of Patent:
May. 28, 2019

Filed:

Nov. 02, 2017

Integrated circuit having a vertical power mos transistor

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chun-Wai Ng, Hsinchu, TW;

Hsueh-Liang Chou, Jhubei, TW;

Po-Chih Su, New Taipei, TW;

Ruey-Hsin Liu, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

David Vu

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 21/265 (2006.01); H01L 21/306 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 21/26513 (2013.01); H01L 21/30604 (2013.01); H01L 21/76224 (2013.01); H01L 21/82385 (2013.01); H01L 21/823418 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 21/823487 (2013.01); H01L 21/823878 (2013.01); H01L 21/823885 (2013.01); H01L 21/823892 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/1095 (2013.01); H01L 29/4236 (2013.01); H01L 29/66621 (2013.01); H01L 29/66666 (2013.01); H01L 29/78 (2013.01); H01L 29/7827 (2013.01); H01L 29/42364 (2013.01); H01L 29/7813 (2013.01);
Abstract

A device includes a vertical transistor and a lateral transistor on a substrate, wherein the vertical transistor comprises a first gate in a first trench, a second gate in a second trench, a source and a drain, wherein the source and the drain are on opposite sides of the first trench and the lateral transistor and the drain are on opposite sides of the second trench.

Find Patent Forward Citations

Ng, Chun-Wai. (2019). Integrated circuit having a vertical power mos transistor (U.S. Patent No. 10304829). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10304829

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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