The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Nov. 28, 2017
Applicant:
Asm International N.v., Almere, NL;
Inventors:
Assignee:
ASM International N.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/26 (2006.01); H01L 21/02 (2006.01); C23C 16/32 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/314 (2006.01); H01L 21/316 (2006.01); H01L 21/768 (2006.01); H01L 21/3205 (2006.01); H01L 21/312 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/32 (2013.01); C23C 16/45525 (2013.01); C23C 16/45531 (2013.01); C23C 16/45534 (2013.01); H01L 21/02205 (2013.01); H01L 21/285 (2013.01); H01L 21/28088 (2013.01); H01L 21/28562 (2013.01); H01L 21/3141 (2013.01); H01L 21/31604 (2013.01); H01L 21/31637 (2013.01); H01L 21/31641 (2013.01); H01L 21/31645 (2013.01); H01L 21/3205 (2013.01); H01L 21/32055 (2013.01); H01L 21/32056 (2013.01); H01L 21/76843 (2013.01); C23C 16/45553 (2013.01); H01L 21/312 (2013.01);
Abstract
Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.