The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Jun. 08, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu-Lung Shih, Hsinchu, TW;
Chao-Keng Li, Jhubei, TW;
Alan Kuo, Hsinchu, TW;
C. C. Chang, Hsinchu, TW;
Yi-An Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of making a semiconductor device includes depositing a dielectric layer over a conductive pad using a first deposition process. The method further includes depositing a first passivation layer directly over the dielectric layer using a high density plasma chemical vapor deposition (HDPCVD). The first deposition process is different from HDPCVD. A thickness of the dielectric layer is sufficient to prevent charges generated by depositing the first passivation layer from reaching the conductive pad.