The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Aug. 07, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Fu-Wei Yao, Hsinchu, TW;
Chun-Wei Hsu, Taichung, TW;
Chen-Ju Yu, Jiaoxi Township, TW;
Jiun-Lei Jerry Yu, Zhudong Township, TW;
Fu-Chih Yang, Fengshan, TW;
Chih-Wen Hsiung, Hsinchu, TW;
King-Yuen Wong, Tuen Mun, HK;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A transistor includes a first layer over a substrate. The transistor also includes a second layer over the first layer. The transistor further includes a carrier channel layer at an interface of the first layer and the second layer. The transistor additionally includes a gate structure, a drain, and a source over the second layer. The transistor also includes a passivation material in the second layer between an edge of the gate structure and an edge of the drain in a top-side view. The carrier channel layer has a smaller surface area than the first layer between the edge of the gate structure and the edge of the drain in the top-side view.