The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2019

Filed:

Mar. 30, 2017
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Jeong-Seok Na, Fremont, CA (US);

Megha Rathod, Fremont, CA (US);

Chiukin Steven Lai, Sunnyvale, CA (US);

Raashina Humayun, Los Altos, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/36 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76843 (2013.01); C23C 16/36 (2013.01); C23C 16/45536 (2013.01); H01L 21/0228 (2013.01); H01L 21/02175 (2013.01); H01L 21/76844 (2013.01); H01L 21/76865 (2013.01); H01L 21/76879 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01);
Abstract

Provided are methods of forming diffusion barriers and adhesion layers for interconnects such as cobalt (Co) interconnects or ruthenium (Ru) interconnects. The methods involve selective deposition of tungsten carbon nitride (WCN) films on the oxide surfaces of a feature including a Co surface. The selective growth of WCN on oxide allows the contact resistance at an interface such as a Co—Co interface or a Co—Ru interface to be significantly reduced while maintaining good film coverage, adhesion, and/or barrier properties on the sidewall oxide surfaces.


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