The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
May. 10, 2018
Versum Materials Us, Llc, Allentown, PA (US);
Manchao Xiao, San Diego, CA (US);
Xinjian Lei, Vista, PA (US);
Daniel P. Spence, Carlsbad, CA (US);
Haripin Chandra, San Marcos, CA (US);
Bing Han, San Marcos, CA (US);
Mark Leonard O'Neill, Queen Creek, AZ (US);
Steven Gerard Mayorga, Oceanside, CA (US);
Anupama Mallikarjunan, San Marcos, CA (US);
VERSUM MATERIALS US, LLC, Tempe, AZ (US);
Abstract
Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein Ris selected from linear or branched Cto Calkyl group, linear or branched Cto Calkenyl group, linear or branched Cto Calkynyl group, Cto Cdialkylamino group, electron withdrawing group, and Cto Caryl group; Ris selected from hydrogen, linear or branched Cto Calkyl group, linear or branched Cto Calkenyl group, linear or branched Cto Calkynyl group, Cto Cdialkylamino group, Cto Caryl group, linear or branched Cto Cfluorinated alkyl group, electron withdrawing group, and Cto Caryl group; optionally wherein Rand Rare linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.