The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Oct. 03, 2011
Jang-gyoo Yang, San Jose, CA (US);
Matthew L. Miller, Newark, CA (US);
Xinglong Chen, San Jose, CA (US);
Kien N. Chuc, Cupertino, CA (US);
Qiwei Liang, Fremont, CA (US);
Shankar Venkataraman, San Jose, CA (US);
Dmitry Lubomirsky, Cupertino, CA (US);
Jang-Gyoo Yang, San Jose, CA (US);
Matthew L. Miller, Newark, CA (US);
Xinglong Chen, San Jose, CA (US);
Kien N. Chuc, Cupertino, CA (US);
Qiwei Liang, Fremont, CA (US);
Shankar Venkataraman, San Jose, CA (US);
Dmitry Lubomirsky, Cupertino, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.