The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Feb. 14, 2018
Applied Materials, Inc., Santa Clara, CA (US);
Xinyu Bao, Fremont, CA (US);
Zhiyuan Ye, San Jose, CA (US);
Flora Fong-Song Chang, Saratoga, CA (US);
Abhishek Dube, Fremont, CA (US);
Xuebin Li, Sunnyvale, CA (US);
Errol Antonio C. Sanchez, Tracy, CA (US);
Hua Chung, San Jose, CA (US);
Schubert S. Chu, San Francisco, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
A device comprising Si:As source and drain extensions and Si:As or Si:P source and drain features formed using selective epitaxial growth and a method of forming the same is provided. The epitaxial layers used for the source and drain extensions and the source and drain features herein are deposited by simultaneous film formation and film etching, wherein the deposited material on the monocrystalline layer is etched at a slower rate than deposition material deposited on non-monocrystalline location of a substrate. As a result, an epitaxial layer is deposited on the monocrystalline surfaces, and a layer is not deposited on non-monocrystalline surfaces of the same base material, such as silicon.