The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Dec. 20, 2017
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Morgan D. Evans, Manchester, MA (US);
Ernest E. Allen, Jr., Rockport, MA (US);
Tyler Burton Rockwell, Lynnfield, MA (US);
Richard J. Hertel, Boxford, MA (US);
Joseph Frederick Sommers, San Jose, CA (US);
Christopher R. Campbell, Newburyport, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A system for implanting ions into a workpiece while minimizing the generation of particles is disclosed. The system includes an ion source having an extraction plate with an extraction aperture. The extraction plate is electrically biased and may also be coated with a dielectric material. The workpiece is disposed on a platen and surrounded by an electrically biased shield. The shield may also be coated with a dielectric material. In operation, a pulsed DC voltage is applied to the shield and the platen, and ions are attracted from the ion source during this pulse. Since a pulsed voltage is used, the impedance of the thin dielectric coating is reduced, allowing the system to function properly.