The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Aug. 04, 2017
Kla-tencor Corporation, Milpitas, CA (US);
Hamamatsu Photonics K.k., Hamamatsu-shi, Shizuoka, JP;
Masaharu Muramatsu, Hamamatsu, JP;
Hisanori Suzuki, Hamamatsu, JP;
Yasuhito Yoneta, Hamamatsu, JP;
Shinya Otsuka, Hamamatsu, JP;
Jehn-Huar Chern, San Jose, CA (US);
David L. Brown, Los Gatos, CA (US);
Yung-Ho Alex Chuang, Cupertino, CA (US);
John Fielden, Los Altos, CA (US);
Venkatraman Iyer, Saratoga, CA (US);
Hamamatsu Photonics K.K., Shizuoka, JP;
KLA-Tencor Corporation, Milpitas, CA (US);
Abstract
An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.