The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Apr. 14, 2017
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Feng-Chi Hung, HsinChu County, TW;

Jen-Cheng Liu, Hsinchu County, TW;

Ching-Chun Wang, Tainan, TW;

Tse-Hua Lu, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 3/14 (2006.01); H04N 5/335 (2011.01); H04N 9/04 (2006.01); H04N 5/225 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14614 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 27/14687 (2013.01); H01L 27/14689 (2013.01);
Abstract

The image sensing device includes a pixel region in a pixel array area and a dummy pixel region in a periphery area. The pixel region includes a radiation region, a floating diffusion region, a transfer transistor, a source-follower transistor, a reset transistor and a select transistor. The dummy pixel region includes a radiation region and a floating diffusion region. A gate of one of the transfer transistor, the reset transistor and the select transistor in the pixel region is electrically connected to the radiation region or the floating diffusion region in the dummy pixel region.


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